Device substrate and fabricating method thereof

ABSTRACT

A device substrate and a fabricating method thereof are provided. The device substrate includes a substrate and a patterned light-shielding layer. The patterned light-shielding layer having a plurality of pixel openings and a plurality of first exposure openings is disposed on the substrate, and an area and/or shape of one of the first exposure openings is different from an area and/or shape of one of the pixel openings.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a divisional application of and claims the prioritybenefit of a prior application Ser. No. 14/316,812, filed on Jun. 27,2014, now pending. The prior application Ser. No. 14/316,812 claims thepriority benefit of Taiwan application serial no. 103113206, filed onApr. 10, 2014. The entirety of each of the above-mentioned patentapplications is hereby incorporated by reference herein and made a partof this specification.

BACKGROUND OF THE INVENTION

[Field of the Invention]

The invention relates to a device substrate and a fabricating methodthereof, and more particularly relates to a device substrate havingexposure openings and a fabricating method thereof.

[Description of Related Art]

As information technology, wireless mobile communication, andinformation appliances rapidly develop in the recent years, the inputdevices for a great many information products have been changed from theconventional keyboards or mice to touch display panels for the purposesof convenience, miniaturization, and being user-friendly. Especially,the touch display panel has become the most popular product among all.

The conventional touch display panel is mainly composed of an activedevice array substrate, an opposite substrate (e.g. color filtersubstrate), and a display medium disposed between these substrates.Moreover, multiple main spacers and multiple secondary spacers arelocated between the active device array substrate and the oppositesubstrate and may be disposed on the opposite substrate or the activedevice array substrate, for example. In the fabricating method of thedevice substrate (e.g. opposite substrate, color filter substrate, oractive device array substrate, etc.) for the conventional touch displaypanel, a phase shift mask, half tone mask, or gray tone mask is requiredfor fabricating the main spacers and the secondary spacers that havedifferent heights. The spacers are generally formed of a transparentmaterial and have high UV transmittance. Therefore, the exposure amountneeds to be very low in order to achieve a high level difference (i.e.large height difference). However, the control capability of the leveldifference is limited to the stability of the phase shift mask, halftone mask, or gray tone mask at low penetration. Besides, because thetransmittance of the phase shift mask, half tone mask, or gray tone maskis a fixed value after the mask is completed at the factory, theadjustable range of the exposure amount is also limited. In addition,the phase shift mask, half tone mask, or gray tone mask further facesproblems such as high production costs and longer stock preparationtime, etc. Hence, how to use a general mask (that is, without using thephase shift mask, half tone mask, or gray tone mask) to fabricate mainspacers and secondary spacers with different heights while maintainingfavorable level difference (i.e. height difference) control capabilityis an issue that needs to be overcome in the production technology ofdisplay panels.

SUMMARY OF THE INVENTION

The invention provides a device substrate and a fabricating methodthereof, which fabricate main spacers and secondary spacers havingdifferent heights with use of a general mask and have favorable leveldifference control capability.

The invention provides a device substrate including a substrate and apatterned light-shielding layer. The patterned light-shielding layer isdisposed on the substrate and includes a plurality of pixel openings anda plurality of first exposure openings. One of the pixel openings andone of the first exposure openings have different areas and/or shapes.

The invention further provides a device substrate including a pluralityof sub-pixel regions, and the device substrate includes a substrate anda plurality of spacers. The spacers are disposed on the substrate, and amaterial of the spacers includes a photosensitive material. Each of thespacers has a top portion, a connection portion, and a bottom portion,wherein the connection portion is located between the top portion andthe bottom portion. A cross-linking density of the photosensitivematerial of the connection portion is smaller than or equal to across-linking density of the photosensitive material of at least one ofthe top portion and the bottom portion, or a decomposition strength ofthe photosensitive material of the connection portion is larger than orequal to a decomposition strengths of the photosensitive material of atleast one of the top portion and the bottom portion.

The invention further provides a fabricating method of a devicesubstrate, and the fabricating method includes the following steps. Asubstrate is provided. A patterned light-shielding layer, including aplurality of pixel openings and a plurality of first exposure openings,is disposed on the substrate, and one of the first exposure openings andone of the pixel openings have different areas and/or shapes. Aphotoresist material layer is formed on the patterned light-shieldinglayer. An exposure process and a development process are performed onthe photoresist material layer to form a plurality of first spacers onthe substrate, wherein vertical projections of the first spacersrespectively overlap the first exposure openings.

Based on the above, in addition to using a general mask as a shieldingmask for performing front exposure on the photoresist material layer,the patterned light-shielding layer can serve as the shielding mask forperforming back exposure on the photoresist material layer, wherein thephotoresist material layer may be a negative or positive photoresist.Accordingly, by combining the steps of front exposure, back exposure,non-exposure, and development with different exposure doses(saturated/unsaturated exposure) or different wavelengths, main spacersand secondary spacers having different heights can be fabricated andfavorable level difference (i.e. height difference) control capabilitycan be achieved. Thus, the device substrate and the fabricating methodof the invention have advantages of lower production costs and simplerfabricating processes.

To make the aforementioned and other features and advantages of theinvention more comprehensible, several embodiments accompanied withdrawings are described in detail as follows.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the invention, and are incorporated in and constitute apart of this specification. The drawings illustrate exemplaryembodiments of the invention and, together with the description, serveto explain the principles of the invention.

FIG. 1A is a schematic top view of a device substrate according to thefirst embodiment of the invention.

FIG. 1B is a schematic cross-sectional view of the device substrate ofFIG. 1A along the line I-I′.

FIG. 2A to FIG. 2D are schematic cross-sectional views showing afabricating method of the device substrate of FIG. 1B.

FIG. 3A is a schematic top view of a device substrate according to thesecond embodiment of the invention.

FIG. 3B is a schematic cross-sectional view of the device substrate ofFIG. 3A along the line I-I′.

FIG. 4A to FIG. 4D are schematic cross-sectional views showing afabricating method of the device substrate of FIG. 3B.

FIG. 5A and FIG. 5B are schematic cross-sectional views of devicesubstrates according to other embodiments of the invention.

FIG. 6A is a schematic top view of a device substrate according to thethird embodiment of the invention.

FIG. 6B is a schematic cross-sectional view of the device substrate ofFIG. 6A along the line I-I′.

FIG. 7A to FIG. 7D are schematic cross-sectional views showing afabricating method of the device substrate of FIG. 6B.

FIG. 8A is a schematic top view of a device substrate according to thefourth embodiment of the invention.

FIG. 8B is a schematic cross-sectional view of the device substrate ofFIG. 8A along the line I-I′.

FIG. 9A to FIG. 9D are schematic cross-sectional views showing afabricating method of the device substrate of FIG. 8B.

FIG. 10A is a schematic top view of a device substrate according to thefifth embodiment of the invention.

FIG. 10B is a schematic cross-sectional view of the device substrate ofFIG. 10A along the line I-I′.

FIG. 11A to FIG. 11D are schematic cross-sectional views showing afabricating method of the device substrate of FIG. 10B.

FIG. 12A is a schematic top view of a device substrate according to thesixth embodiment of the invention.

FIG. 12B is a schematic cross-sectional view of the device substrate ofFIG. 12A along the line I-I′.

FIG. 13A to FIG. 13D are schematic cross-sectional views showing afabricating method of the device substrate of FIG. 12B.

FIG. 14A is a schematic top view of a device substrate according to theseventh embodiment of the invention.

FIG. 14B is a schematic cross-sectional view of the device substrate ofFIG. 14A along the line I-I′.

FIG. 15A to FIG. 15D are schematic cross-sectional views showing afabricating method of the device substrate of FIG. 14B.

FIG. 16A is a schematic top view of a device substrate according to theeighth embodiment of the invention.

FIG. 16B is a schematic cross-sectional view of the device substrate ofFIG. 16A along the line I-I′.

FIG. 17A to FIG. 17D are schematic cross-sectional views showing afabricating method of the device substrate of FIG. 16B.

DESCRIPTION OF THE EMBODIMENTS

FIG. 1A is a schematic top view of a device substrate according to thefirst embodiment of the invention. FIG. 1B is a schematiccross-sectional view of the device substrate of FIG. 1A along the lineI-I′. In this embodiment, a device substrate 100A is a color filtersubstrate, an opposite substrate, an active device array substrate, orother suitable device substrates, for example. In the followingparagraphs, the device substrate 100A is for example a color filtersubstrate of a touch display panel in the embodiment of the invention.However, it is noted that the invention is not limited thereto. Adisplay panel of the touch display panel is a liquid crystal displaypanel, an organic light emitting diode display panel, an electrophoreticdisplay panel, or a plasma display panel, for example.

With reference to FIG. 1A and FIG. 1B, the device substrate 100Aincludes a plurality of sub-pixel regions that are arranged in a matrix.Moreover, the device substrate 100A includes a substrate 110, apatterned light-shielding layer 120, a plurality of color filterpatterns 130, a transparent layer 140, a plurality of first spacers 170,and a plurality of second spacers 180.

The substrate 110 has a first side 110 a and a second side 110 b thatare disposed opposite to each other, wherein the first side 110 a is aside facing an active device array substrate (not shown), for example. Amaterial of the substrate 110 is an inorganic or organic transparentmaterial, such as glass or plastic, for example.

The patterned light-shielding layer 120 is disposed on the first side110 a of the substrate 110. The patterned light-shielding layer 120 hasa plurality of pixel openings 122 and a plurality of first exposureopenings 124. The pixel openings 122 are located in the sub-pixelregions PR of the device substrate 100A, and the pixel openings 122 arearranged in a matrix, for example. Each of the first exposure openings124 is located between two adjacent pixel openings 122. In thisembodiment, a shape of the pixel opening 122 is rectangular and a widthW1 thereof is in a range of 12 micrometers to 120 micrometers, forexample. A shape of the first exposure opening 124 is circular and awidth W2 thereof (i.e. diameter) is in a range of 4 micrometers to 40micrometers, for example. However, it is noted that the invention is notlimited thereto. The scope of the invention covers various embodimentsas long as one of the first exposure openings 124 and one of the pixelopenings 122 have different areas and/or shapes. The shape of the firstexposure opening 124 or the pixel opening 122 in FIG. 1A may becircular, elliptic, rectangular, square, triangular, rhombic, polygonal,or other suitable shapes. The patterned light-shielding layer 120 is ablack matrix, for example, and a material thereof is a black resin,metal or other suitable materials. Furthermore, according to otherembodiments, for example, in a multi-domain vertical alignment (MVA)liquid crystal display panel, the patterned light-shielding layer 120may further include an alignment protrusion, such that liquid crystalmolecules in a liquid crystal layer tilt in different directions to forma plurality of alignment regions so as to achieve a wide viewing angledisplay effect.

The color filter patterns 130 are respectively located in the pixelopenings 122, not in the first exposure openings 124. The color filterpatterns 130 are color filter layers. In this embodiment, the colorfilter patterns 130 are formed of a plurality of red filter patterns, aplurality of green filter patterns, and a plurality of blue filterpatterns, for example. However, it is noted that the invention is notlimited thereto. In other embodiments, the color filter patterns 130 mayinclude red filter patterns, green filter patterns, blue filterpatterns, white filter patterns, yellow filter patterns, filter patternsof other suitable colors, or any combination of the foregoing filterpatterns. Moreover, an arrangement of the color filter patterns 130 onthe substrate 110 includes a stripe form, a triangle form, a mosaicform, a four-pixel faun, or other suitable forms, for example. In otherwords, the invention is not intended to limit the color combination,number, and arrangement of the color filter patterns 130. In addition,according to other embodiments, for example, in a color filter on array(COA) display panel, the device substrate 100A is an opposite substrateand does not include the color filter patterns 130, for example.

The transparent layer 140 is disposed on the patterned light-shieldinglayer 120 and the color filter patterns 130. In other words, thetransparent layer 140 covers the substrate 110, the patternedlight-shielding layer 120, the color filter patterns 130 and the firstexposure openings 124. The transparent layer 140 may be a transparentelectrode layer, a transparent flat/insulating layer, or a combinationof the foregoing. The transparent electrode layer is formed of asingle-layer or multi-layer transparent material, which may be indiumtin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO),aluminum tin oxide (ATO), SnO₂:F (FTO), or other suitable materials, forexample. The transparent flat/insulating layer is formed of asingle-layer or multi-layer transparent material, such as polymethylmethacrylate (PMMA), polyimide (PI), siloxane, silicon nitride andsilicon oxide, or other suitable material.

The first spacers 170 are disposed on the substrate 110, and verticalprojections of the first spacers 170 respectively overlap the firstexposure openings 124. More specifically, the first spacers 170 aredisposed on the transparent layer 140 corresponding to the firstexposure openings 124, so as to cover the first exposure openings 124.In this embodiment, when the device substrate 100A is a color filtersubstrate of a touch display panel, the first spacers 170 are mainspacers, for example, for maintaining a gap between the color filtersubstrate and the active device array substrate. A height H1 of each ofthe first spacers 170 is in a range of 1 micrometer to 6 micrometers,and preferably in a range of 2.5 micrometers to 4 micrometers, forexample. In this embodiment, the height H1 (i.e. maximum height) of thefirst spacer 170 is a maximum distance between a top surface (not shown)of the first spacer 170 and a top surface (not shown) of the transparentlayer 140, for example. A material of the first spacer 170 is aphotosensitive material, for example. A main structure of thephotosensitive material includes PMMA, PI, siloxane, or other suitablemain structures, and includes acryl, epoxy, novolak, or other suitablefunctional groups and various photo initiators having differentabsorption wavelengths.

It is noted that the first spacers 170 may completely or partially coverthe first exposure openings 124. In other words, a size of each of thefirst spacers 170 may be larger than, equal to, or smaller than a sizeof each of the first exposure openings 124. For example, if the firstexposure openings 124 do not overlap or partially overlaplight-shielding elements (e.g. active device, scan line, or data line,etc.) on the active device array substrate, the first spacers 170 may bea black photosensitive material, and the size of each of the firstspacers 170 may be larger than or equal to the size of each of the firstexposure openings 124, so as to avoid light leakage from the firstexposure openings 124. Further, for example, if the first exposureopenings 124 and the light-shielding elements (e.g. active device, scanline, or data line, etc.) formed on the active device array substratecompletely overlap, the first spacers 170 may be a transparentphotosensitive material or photosensitive materials of other suitablecolors, and the size of each of the first spacers 170 may be largerthan, equal to, or smaller than the size of each of the first exposureopenings 124 because the first exposure openings 124 are completelyshielded to avoid light leakage. The number of the first spacers 170 onthe substrate 110 is determined according to the actual situation (e.g.sizes or other design specifications of the substrate and the pixel).The shape of the first spacer 170 in FIG. 1A may be circular, elliptic,rectangular, square, triangular, rhombic, polygonal, or other suitableshapes, for example. A cross-sectional shape of the first spacer 170 inFIG. 1B is rectangular, for example. However, it is noted that theinvention is not limited thereto. In other embodiments, thecross-sectional shape of the first spacer 170 may also be square,trapezoid, or other suitable shapes. In other words, the invention isnot intended to limit the color, size, number, shape, andcross-sectional shape of the first spacers 170.

It is also noted that each of the first spacers 170 has a top portion172, a connection portion 174, and a bottom portion 176. The bottomportion 176 is a portion close to the first exposure opening 124, thetop portion 172 is a portion away from the first exposure opening 124,and the connection portion 174 is located between the top portion 172and the bottom portion 176 and contacts both of them. In thisembodiment, a relationship between cross-linking densities (orcross-linking strengths) of the photosensitive material of the firstspacer 170 is: the bottom portion 176>the top portion 172>the connectionportion 174. Furthermore, because the first spacer 170 is a negativephotoresist, a cross-linking functional group of the photosensitivematerial of the first spacer 170 includes acryl and epoxy, wherein theportion having higher cross-linking density (e.g. the bottom portion176) has more acryl cross-linking than the portion having lowercross-linking density (e.g. the top portion 172 or the connectionportion 174). In other words, the portion having higher cross-linkingdensity has much more carbon content than oxygen content.

The second spacers 180 are disposed on the substrate 110, and verticalprojections of the second spacers 180 are respectively outside the firstexposure openings 124. More specifically, the second spacers 180 aredisposed on the transparent layer 140 and do not overlap the firstexposure openings 124. In this embodiment, when the device substrate100A is a color filter substrate of a touch display panel, the secondspacers 180 are secondary spacers, for example. Moreover, in thisembodiment, the material of the first spacers 170 and the second spacers180 is a negative photoresist, and the height H1 of each of the firstspacers 170 is larger than a height H2 of each of the second spacers180. A height difference (H1−H2) between the first spacer 170 and thesecond spacer 180 is larger than 0.2 micrometer, for example. Thematerial of the second spacer 180 is a photosensitive material, forexample.

It is noted that the number of the second spacers 180 on the substrate110 is determined according to the actual situation (e.g. the sizes orother design specifications of the substrate and the pixel). A shape ofthe second spacer 180 in FIG. 1A may be circular, elliptic, rectangular,square, triangular, rhombic, polygonal, or other suitable shapes, forexample. A cross-sectional shape of the second spacer 180 in FIG. 1B isrectangular, for example. However, it is noted that the invention is notlimited thereto.

In other embodiments, the cross-sectional shape of the second spacer 180may also be square, trapezoid, or other suitable shapes. In other words,the invention is not intended to limit the color, size, number, shape,and cross-sectional shape of the second spacers 180.

It is also noted that each of the second spacers 180 has a top portion182, a connection portion 184, and a bottom portion 186. The bottomportion 186 is a portion close to the patterned light-shielding layer120, the top portion 182 is a portion away from the patternedlight-shielding layer 120, and the connection portion 184 is locatedbetween the top portion 182 and the bottom portion 186 and contacts bothof them. In this embodiment, a relationship between cross-linkingdensities of the photosensitive material of the second spacer 180 is:the top portion 182>the connection portion 184=the bottom portion 186.As described above, in this embodiment, if there is a difference betweenexposure intensities received by the top portion, the connectionportion, and the bottom portion of the spacer, interfaces therebetweenare indicated by solid lines. If there is no obvious difference betweenthe exposure intensities received by the top portion, the connectionportion, and the bottom portion of the spacer, broken lines are used toindicate that no interface exists or it is difficult to distinguish thelayers. Furthermore, a ratio of the heights of the top portion, theconnection portion, and the bottom portion of the spacer illustrated inthis embodiment is merely an example and should not be construed as alimitation to the actual height ratio.

In addition, an alignment layer (not shown) may be further disposed onthe transparent layer 140, the first spacers 170, and the second spacers180. That is to say, the alignment layer covers a side of the devicesubstrate 100A close to a display medium, such that the display mediumis in a specific arrangement direction.

FIG. 2A to FIG. 2D are schematic cross-sectional views showing afabricating method of the device substrate 100A of FIG. 1B.

With reference to FIG. 2A, the substrate 110 is provided, and thesubstrate 110 has the first side 110 a and the second side 110 b thatare disposed opposite to each other. Next, the patterned light-shieldinglayer 120 is formed on the first side 110 a of the substrate 110. Thepatterned light-shielding layer 120 has a plurality of pixel openings122 (as shown in FIG. 1A) and a plurality of first exposure openings124, and one of the first exposure openings 124 and one of the pixelopenings 122 have different areas and/or shapes. A forming method of thepatterned light-shielding layer 120 for example includes forming alight-shielding layer (not shown) on the substrate 110 and thenperforming a lithography process to pattern the light-shielding layer.The color filter patterns 130 (as shown in FIG. 1A) are respectivelyformed in pixel openings 122.

A foaming method of the color filter patterns 130 for example includescoating a resin material layer (not shown) on the substrate 110 by aspin coating, slit coating, or spin-less coating, and then patterningthe resin material layer. Steps of patterning the resin material layerinclude soft baking, exposing, developing, and hard baking the resinmaterial layer. Thereafter, the transparent layer 140 is formed to coverthe substrate 110, the patterned light-shielding layer 120, the colorfilter patterns 130 and the first exposure openings 124. A portion ofthe transparent layer 140 is completely filled within the first exposureopenings 124. A forming method of the transparent layer 140 is aphysical vapor deposition method or a chemical vapor deposition method,for example. Afterward, a photoresist material layer 150 is formed onthe transparent layer 140. A forming method of the photoresist materiallayer 150 is spin coating, for example. In this embodiment, a materialof the photoresist material layer 150 includes a photosensitivematerial, and the photoresist material layer 150 is a negativephotoresist. For example, the photoresist material layer 150 may be anegative photoresist of a black photosensitive material, and an OD valuethereof is larger than 1. The cross-linking strength between materialmolecules increases after exposure, and in comparison with an unexposedor low-dose exposed portion, a relatively larger layer thickness isformed after hard baking. Therefore, different exposure doses may beused to fabricate spacers with different heights. To be more specific,after exposure, the material of the negative photoresist is cross-linkedto generate a 2D or 3D structure, which increases the layer thicknessand does not easily collapse after being hard baked to form a layer.Accordingly, in this embodiment, the higher the cross-linking density(or cross-linking strength) of the material of the negative photoresistis, the larger the layer thickness becomes after hard baking. However,due to the influence of the material properties and fabricatingprocesses, in other embodiments, an absolute height of the layerthickness of the exposed negative photoresist after hard baking may notnecessarily be higher than an absolute height before hard baking.Nevertheless, the exposed negative photoresist has relatively largerlayer thickness than an unexposed or low-dose exposed negativephotoresist.

Next, as shown in FIG. 2B to FIG. 2D, an exposure process and adevelopment process are performed on the photoresist material layer 150to form a plurality of first spacers 170 and a plurality of secondspacers 180 on the substrate 110. In the following paragraphs, Steps(a), (b), and (c) included in the exposure process and the developmentprocess performed on the photoresist material layer 150 are explained indetail.

With reference to FIG. 2B, Step (a) is to provide a mask 160 on thephotoresist material layer 150, so as to perform an exposure UV1 on thephotoresist material layer 150 with the mask 160 as a shielding mask.Step (a) may also be called a front exposure, which is to perform theexposure UV1 on the first side 110 a of the substrate 110. In thisembodiment, Step (a) is an unsaturated exposure (the exposure dose is ina range of 6 mJ to 30 mJ, for example), and because the photoresistmaterial layer 150 is a negative photoresist, the cross-linking densityof the photosensitive material of a portion of the photoresist materiallayer 150 that receives the exposure UV1 is increased to form the topportion 172 and the top portion 182 that are development-resistant (i.e.will not be removed in the development step). A vertical projection ofthe top portion 172 respectively overlaps the first exposure opening124, and a vertical projection of the top portion 182 is located outsidethe first exposure opening 124 respectively.

With reference to FIG. 2C, Step (b) is to develop the photoresistmaterial layer 150 after the exposure UV1. Step (b) may also be called adevelopment. In this embodiment, because the top portion 172 and topportion 182 which have higher development-resistant than other portionscover a portion of the photoresist material layer 150, the portion ofthe photoresist material layer 150 covered by the top portion 172 andthe top portion 182 is not removed in Step (b) while the uncoveredportion of the photoresist material layer 150 is removed. A plurality ofthe second spacers 180 are formed by Step (a) and Step (b), and thevertical projections of the second spacers 180 are respectively outsidethe first exposure openings 124.

With reference to FIG. 2D, Step (c) is to perform an exposure UV2 on thephotoresist material layer 150 with the patterned light-shielding layer120 as a shielding mask. Step (c) may also be called a back exposure,which is to perform the exposure UV2 on the second side 110 b of thesubstrate 110. In addition, the exposure UV1 and the exposure UV2 havedifferent exposure doses or different wavelengths, for example.

In this embodiment, Step (c) is a saturated exposure (the exposure doseis 300 mJ, for example), and because the photoresist material layer 150is a negative photoresist, the cross-linking density of thephotosensitive material of a portion of the photoresist material layer150 that receives the exposure UV2 is increased to form the bottomportion 176. In Step (c), a portion of the photoresist material layer150 that does not receive the exposure UV2 forms the connection portion174. However, it is noted that the invention is not limited thereto. Inother embodiments, the connection portion 174 and the bottom portion 176may both receive the exposure UV2. Accordingly, a plurality of the firstspacers 170 are formed by Step (a), Step (b), and Step (c), and thevertical projections of the first spacers 170 respectively overlap thefirst exposure openings 124. Moreover, each of the first spacers 170includes the top portion 172, the connection portion 174, and the bottomportion 176.

In this embodiment, because the second spacers 180 only receive theunsaturated front exposure, the relationship between the cross-linkingdensities of the photosensitive material of the second spacers 180 is:the top portion 182>the connection portion 184=the bottom portion 186.Further, because the first spacers 170 receive the unsaturated frontexposure and saturated back exposure, the relationship between thecross-linking densities of the photosensitive material of the firstspacers 170 is: the bottom portion 176>the top portion 172>theconnection portion 174. Accordingly, after hard baking, the height H1 ofthe first spacer 170 is larger than the height H2 of the second spacer180.

In the embodiment of FIG. 2A to FIG. 2D, a sequence of the stepsincluded in the exposure process and the development process performedon the photoresist material layer 150 is Steps (a)/(b)/(c) (i.e. Step(a) precedes Step (b), and Step (c) is after Step (a) and Step (b)), forexample. However, the invention is not limited thereto. In otherembodiments, the sequence of the steps included in the exposure processand the development process performed on the photoresist material layer150 may also be Steps (c)/(b)/(a), Steps (a)/(c)/(b), or Steps(c)/(a)/(b), as long as Step (a) precedes Step (c) or Step (c) precedesStep (a). Various sequences of Steps (a), (b), and (c) may be inferredby those skilled in the art from the teaching of the embodiment of FIG.2A to FIG. 2D. Thus, details are not illustrated here. In addition, thesteps of forming the spacers may further include performing soft bakingor hard baking on the photoresist material layer 150.

FIG. 3A is a schematic top view of a device substrate according to thesecond embodiment of the invention. FIG. 3B is a schematiccross-sectional view of the device substrate of FIG. 3A along the lineI-I′. The embodiment of FIG. 3A to FIG. 3B is similar to the embodimentof FIG. 1A to FIG. 1B. Therefore, identical or similar elements aredenoted by the same or similar reference numerals, which will not bedescribed again hereinafter. With reference to FIG. 3A and FIG. 3B, adifference between the embodiment of FIG. 3A to FIG. 3B and theembodiment of FIG. 1A to FIG. 1B is that: in a device substrate 200A, amaterial of first spacers 270 and second spacers 280 is a positivephotoresist, and the height H2 of each of the second spacers 280 islarger than the height H1 of each of the first spacers 270.

A plurality of the first spacers 270 are disposed on the substrate 110,and vertical projections of the first spacers 270 respectively overlapthe first exposure openings 124. More specifically, the first spacers270 are disposed on the transparent layer 140 corresponding to the firstexposure openings 124, so as to cover the first exposure openings 124.In this embodiment, when the device substrate 200A is a color filtersubstrate of a touch display panel, the first spacers 270 are secondaryspacers, for example. The material of the first spacer 270 is aphotosensitive material, for example. Moreover, the invention is notintended to limit the color, size, number, shape, and cross-sectionalshape of the first spacers 270.

It is also noted that each of the first spacers 270 has a top portion272, a connection portion 274, and a bottom portion 276. The bottomportion 276 is a portion close to the first exposure opening 124, thetop portion 272 is a portion away from the first exposure opening 124,and the connection portion 274 is located between the top portion 272and the bottom portion 276. In this embodiment, a relationship betweendecomposition strengths of the photosensitive material of the firstspacer 270 is: the bottom portion 276>the connection portion 274>the topportion 272 (equivalent to the relationship between the cross-linkingdensities, which is the bottom portion 276<the connection portion274<the top portion 272). In other words, a weak development layer ofthe top portion 272 of the first spacer 270 can be removed. Because theconnection portion 274 and the bottom portion 276 are protected by thetop portion 272, only lateral development etching occurs.

A plurality of the second spacers 280 are disposed on the substrate 110,and vertical projections of the second spacers 280 are respectivelyoutside the first exposure openings 124. More specifically, the secondspacers 280 are disposed on the transparent layer 140 and do not overlapthe first exposure openings 124. In this embodiment, when the devicesubstrate 200A is a color filter substrate of a touch display panel, thesecond spacers 280 are main spacers, for example, for maintaining a gapbetween the color filter substrate and the active device arraysubstrate. The height H2 of each of the second spacers 280 is in a rangeof 1 micrometer to 6 micrometers, and preferably in a range of 2.5micrometers to 4 micrometers, for example. Moreover, in this embodiment,the material of the first spacers 270 and the second spacers 280 is apositive photoresist, and the height H2 of each of the second spacers280 is larger than the height H1 of each of the first spacers 270. Aheight difference (H2−H1) between the first spacer 270 and the secondspacer 280 is larger than 0.2 micrometer, for example. The material ofthe second spacer 280 is a photosensitive material, for example.Moreover, the invention is not intended to limit the color, size,number, shape, and cross-sectional shape of the second spacers 280.

It is also noted that each of the second spacers 280 has a top portion282, a connection portion 284, and a bottom portion 286. The bottomportion 286 is a portion close to the patterned light-shielding layer120, the top portion 282 is a portion away from the patternedlight-shielding layer 120, and the connection portion 284 is locatedbetween the top portion 282 and the bottom portion 286. In thisembodiment, a relationship between decomposition strengths of thephotosensitive material of the second spacer 280 is: the bottom portion286=the connection portion 284=the top portion 282 (equivalent to therelationship between the cross-linking densities, which is the bottomportion 286=the connection portion 284=the top portion 282).

FIG. 4A to FIG. 4D are schematic cross-sectional views showing afabricating method of the device substrate 200A of FIG. 3B. Theembodiment of FIG. 4A to FIG. 4D is similar to the embodiment of FIG. 2Ato FIG. 2D. Therefore, identical or similar elements are denoted by thesame or similar reference numerals, which will not be described againhereinafter.

With reference to FIG. 4A, a photoresist material layer 250 is formed onthe transparent layer 140. A forming method of the photoresist materiallayer 250 is spin coating, for example. In this embodiment, a materialof the photoresist material layer 250 includes a photosensitivematerial, and the photoresist material layer 250 is a positivephotoresist.

Next, as shown in FIG. 4B to FIG. 4D, an exposure process and adevelopment process are performed on the photoresist material layer 250to form the first spacers 270 and the second spacers 280 on thesubstrate 110. In the following paragraphs, Steps (a), (b), and (c)included in the exposure process and the development process performedon the photoresist material layer 250 are explained in detail.

With reference to FIG. 4B, Step (a) is to provide a mask 260 on thephotoresist material layer 250, so as to perform the exposure UV1 on thephotoresist material layer 250 with the mask 260 as a shielding mask.Step (a) may also be called a front exposure. In this embodiment, Step(a) is a saturated exposure, and because the photoresist material layer250 is a positive photoresist, the decomposition strength of thephotosensitive material of a portion of the photoresist material layer250 that receives the exposure UV1 is increased (i.e. functional groupsreactive to a developer increase) to form a photoresist material layer250′ that is development-intolerant (i.e. will be removed in thedevelopment step). Further, a portion of a vertical projection of thephotoresist material layer 250 that does not receive the exposure UV1respectively overlaps the first exposure opening 124, and anotherportion of the vertical projection is located outside the first exposureopening 124 respectively.

With reference to FIG. 4C, Step (b) is to perform an exposure UV2 on thephotoresist material layer 250 with the patterned light-shielding layer120 as a shielding mask. Step (b) may also be called a back exposure. Inthis embodiment, Step (b) is an unsaturated exposure, and because thephotoresist material layer 250 is a positive photoresist, thedecomposition strength of the photosensitive material of a portion ofthe photoresist material layer 250 that receives the exposure UV2 isslightly increased (i.e. functional groups reactive to the developerslightly increase) to form a photoresist material layer 250″ that hasweak development resistance (i.e. will be partially removed in thedevelopment step).

With reference to FIG. 4D, Step (c) is to develop the photoresistmaterial layer 250 after the exposure UV2. Step (c) may also be called adevelopment. In this embodiment, the development-intolerant photoresistmaterial layer 250′ is removed completely, the photoresist materiallayer 250″ that has weak development resistance is partially removed,and the photoresist material layer 250 that does not receive theexposures UV1 and UV2 is not removed. Therefore, in Step (c), thephotoresist material layer 250″ that is not removed forms the firstspacers 270, and the photoresist material layer 250 that is not removedforms the second spacers 280. Accordingly, a plurality of the firstspacers 270 are formed by Step (a), Step (b), and Step (c), and thevertical projections of the first spacers 270 respectively overlap thefirst exposure openings 124. A plurality of the second spacers 280 areformed by Step (a) and Step (c), and the vertical projections of thesecond spacers 280 are respectively outside the first exposure openings124. In addition, each of the first spacers 270 has the top portion 272,the connection portion 274, and the bottom portion 276, and each of thesecond spacers 280 has the top portion 282, the connection portion 284,and the bottom portion 286.

In this embodiment, because the first spacers 270 only receive theunsaturated back exposure, the relationship between the decompositionstrengths of the photosensitive material of the first spacers 270 is:the bottom portion 276>the connection portion 274>the top portion 272.Furthermore, because the second spacers 280 do not receive the frontexposure or the back exposure, the relationship between thedecomposition strengths of the photosensitive material of the secondspacers 280 is: the bottom portion 286=the connection portion 284=thetop portion 282. That is to say, because the second spacers 280 are notexposed, the second spacers 280 are all high development-resistantlayers. Accordingly, after hard baking, the height H2 of the secondspacer 280 is larger than the height H1 of the first spacer 270.

In the embodiment of FIG. 4A to FIG. 4D, a sequence of the stepsincluded in the exposure process and the development process performedon the photoresist material layer 250 is Steps (a)/(b)/(c) (i.e. Step(a) precedes Step (b), and Step (c) is after Step (a) and Step (b)), forexample. However, the invention is not limited thereto. In otherembodiments, the sequence of the steps included in the exposure processand the development process performed on the photoresist material layer250 may also be Steps (b)/(a)/(c) (i.e. Step (b) precedes Step (a), andStep (c) is after Step (a) and Step (b)). Various sequences of Steps(a), (b), and (c) may be inferred by those skilled in the art from theteaching of the embodiment of FIG. 4A to FIG. 4D. Thus, details are notillustrated here.

In the embodiments of FIG. 1A to FIG. 4D, the patterned light-shieldinglayer 120 is disposed on the first side 110 a of the substrate 110, forexample. However, the invention is not limited thereto. In otherembodiments, the patterned light-shielding layer 120 may be disposed onthe second side 110 b of the substrate 110. For example, as shown inFIG. 5A, the material of the first spacers 170 and the second spacers180 is a negative photoresist, and the patterned light-shielding layer120 is located on the second side 110 b of the substrate 110. As shownin FIG. 5B, the material of the first spacers 270 and the second spacers280 is a positive photoresist, and the patterned light-shielding layer120 is located on the second side 110 b of the substrate 110. Theembodiments of FIG. 5A and FIG. 5B are similar to the embodiments ofFIG. 1A to FIG. 2D and FIG. 3A to FIG. 4D respectively. Therefore,identical or similar elements are denoted by the same or similarreference numerals, which will not be described again hereinafter. Inother words, the invention does not limit whether the patternedlight-shielding layer 120 is on the first side 110 a or the second side110 b of the substrate 110, as long as the patterned light-shieldinglayer 120 can serve as the shielding mask for performing back exposureon the photoresist material layer 150 or 250.

FIG. 6A is a schematic top view of a device substrate according to thethird embodiment of the invention. FIG. 6B is a schematiccross-sectional view of the device substrate of FIG. 6A along the lineI-I′. The embodiment of FIG. 6A to FIG. 6B is similar to the embodimentof FIG. 1A to FIG. 1B. Therefore, identical or similar elements aredenoted by the same or similar reference numerals, which will not bedescribed again hereinafter. With reference to FIG. 6A and FIG. 6B, adifference between the embodiment of FIG. 6A to FIG. 6B and theembodiment of FIG. 1A to FIG. 1B is that: in a device substrate 100B,each of the first spacers 170 has a first portion 170 a and a secondportion 170 b connected with a periphery of the first portion 170 a, anda height H1 of the first portion 170 a is larger than a height H1′ ofthe second portion 170 b.

A plurality of the first spacers 170 and a plurality of the secondspacers 180 are disposed on the substrate 110. Each of the first spacers170 has the first portion 170 a and the second portion 170 b connectedwith the periphery of the first portion 170 a. In other words, each ofthe first spacers 170 has the first portion 170 a and the second portion170 b, wherein the second portion 170 b is disposed to surround and isconnected with the first portion 170 a. A vertical projection of thefirst portion 170 a on the patterned light-shielding layer 120respectively overlaps the corresponding first exposure opening 124, anda vertical projection of the second portion 170 b on the patternedlight-shielding layer 120 is located outside the corresponding firstexposure opening 124. The vertical projection of the second spacer 180is located outside the first exposure opening 124 respectively. Morespecifically, the first spacers 170 and the second spacers 180 aredisposed on the transparent layer 140. The first portion 170 a isdisposed corresponding to the first exposure opening 124 to cover thefirst exposure opening 124 while the second portion 170 b and the secondspacer 180 do not overlap the first exposure opening 124. In thisembodiment, when the device substrate 100B is a color filter substrateof a touch display panel, the first spacers 170 are main spacers, forexample, for maintaining a gap between the color filter substrate andthe active device array substrate, and the second spacers 180 aresecondary spacers, for example. The height H1 of the first portion 170 aof each of the first spacers 170 is in a range of 1 micrometer to 6micrometers, and preferably in a range of 2.5 micrometers to 4micrometers, for example. Moreover, in this embodiment, the material ofthe first spacers 170 and the second spacers 180 is a negativephotoresist. The height H1 of the first portion 170 a is larger than theheight H1′ of the second portion 170 b, and the height H1′ of the secondportion 170 b is equal to the height H2 of the second spacer 180. Aheight difference (H1−H1′) between the first portion 170 a and thesecond portion 170 b is larger than 0.2 micrometer, for example. Inother words, the cross-sectional shape of the first spacer 170 in FIG.6B is stepped, for example. The material of the first spacer 170 and thesecond spacer 180 is a photosensitive material, for example. Moreover,the invention is not intended to limit the color, size, number, shape,and cross-sectional shape of the first spacers 170 or the second spacers180.

It is noted that each of the first portions 170 a has a top portion 172a, a connection portion 174 a, and a bottom portion 176 a, and each ofthe second portions 170 b has a top portion 172 b, a connection portion174 b, and a bottom portion 176 b. In this embodiment, a relationshipbetween cross-linking densities (or cross-linking strengths) of thephotosensitive material of the first portion 170 a is: the bottomportion 176 a>the top portion 172 a>the connection portion 174 a, and arelationship between cross-linking densities of the photosensitivematerial of the second portion 170 b is: the top portion 172 b>theconnection portion 174 b=the bottom portion 176 b. Moreover, each of thesecond spacers 180 has the top portion 182, the connection portion 184,and the bottom portion 186. In this embodiment, a relationship betweenthe cross-linking densities of the photosensitive material of the secondspacer 180 is: the top portion 182>the connection portion 184=the bottomportion 186. In other words, in this embodiment, the cross-linkingdensities of the photosensitive materials of the second portion 170 band the second spacer 180 have the same distribution.

FIG. 7A to FIG. 7D are schematic cross-sectional views showing afabricating method of the device substrate 100B of FIG. 6B. Theembodiment of FIG. 7A to FIG. 7D is similar to the embodiment of FIG. 2Ato FIG. 2D. Therefore, identical or similar elements are denoted by thesame or similar reference numerals, which will not be described againhereinafter.

With reference to FIG. 7A, the structures and fabricating methods ofFIG. 7A and FIG. 2A are the same. Therefore, identical elements aredenoted by the same reference numerals, which will not be describedagain hereinafter. In this embodiment, the material of the photoresistmaterial layer 150 includes a photosensitive material, and thephotoresist material layer 150 is a negative photoresist.

Next, as shown in FIG. 7B to FIG. 7D, an exposure process and adevelopment process are performed on the photoresist material layer 150to form the first spacers 170 and the second spacers 180 on thesubstrate 110. In the following paragraphs, Steps (a), (b), and (c)included in the exposure process and the development process performedon the photoresist material layer 150 are explained in detail.

With reference to FIG. 7B, Step (a) is to provide a mask 360 on thephotoresist material layer 150, so as to perform the exposure UV1 on thephotoresist material layer 150 with the mask 360 as a shielding mask.Step (a) may also be called a front exposure. In this embodiment, Step(a) is an unsaturated exposure, and because the photoresist materiallayer 150 is a negative photoresist, the cross-linking density of thephotosensitive material of a portion of the photoresist material layer150 that receives the exposure UV1 is increased to form the top portion172 and the top portion 182 that are high development-resistant (i.e.will not be removed in the development step). A vertical projection ofthe top portion 172 respectively overlaps the first exposure opening124, and a size of the top portion 172 is larger than the size of thefirst exposure opening 124. A vertical projection of the top portion 182is located outside the first exposure opening 124 respectively.

With reference to FIG. 7C, Step (b) is to develop the photoresistmaterial layer 150 after the exposure UV1. Step (b) may also be called adevelopment. In this embodiment, because the top portion 172 and topportion 182 which has high development-resistant cover a portion of thephotoresist material layer 150, the portion of the photoresist materiallayer 150 covered by the top portion 172 and the top portion 182 is notremoved in Step (b) while the uncovered portion of the photoresistmaterial layer 150 is removed. A plurality of the second spacers 180 areformed by Step (a) and Step (b), and the vertical projections of thesecond spacers 180 are respectively outside the first exposure openings124.

With reference to FIG. 7D, Step (c) is to perform an exposure UV2 on thephotoresist material layer 150 with the patterned light-shielding layer120 as a shielding mask. Step (c) may also be called a back exposure. Inthis embodiment, Step (c) is a saturated exposure, and because thephotoresist material layer 150 is a negative photoresist, thecross-linking density of the photosensitive material of a portion of thephotoresist material layer 150 that receives the exposure UV2 isincreased to form the bottom portion 176 a. In Step (c), a portion ofthe photoresist material layer 150 that does not receive the exposureUV2 forms the connection portion 174 a, the connection portion 174 b,and the bottom portion 176 b. Accordingly, a plurality of the firstspacers 170 are formed by Step (a), Step (b), and Step (c), and each ofthe first spacers 170 has the first portion 170 a and the second portion170 b connected with the periphery of the first portion 170 a. Thevertical projection of the first portion 170 a on the patternedlight-shielding layer 120 respectively overlaps the corresponding firstexposure opening 124, and the vertical projection of the second portion170 b on the patterned light-shielding layer 120 is located outside thecorresponding first exposure opening 124. Moreover, each of the firstportions 170 a has the top portion 172 a, the connection portion 174 a,and the bottom portion 176 a, and each of the second portions 170 b hasthe top portion 172 b, the connection portion 174 b, and the bottomportion 176 b.

In this embodiment, because the second spacers 180 only receive theunsaturated front exposure, the relationship between the cross-linkingdensities of the photosensitive material of the second spacers 180 is:the top portion 182>the connection portion 184=the bottom portion 186.Further, because the first portions 170 a of the first spacers 170receive the unsaturated front exposure and saturated back exposure, therelationship between the cross-linking densities of the photosensitivematerial of the first portions 170 a is: the bottom portion 176 a>thetop portion 172 a>the connection portion 174 a. Because the secondportions 170 b of the first spacers 170 only receive the unsaturatedfront exposure, the relationship between the cross-linking densities ofthe photosensitive material of the second portions 170 b is: the topportion 172 b>the connection portion 174 b=the bottom portion 176 b.Accordingly, after hard baking, the height H1 of the first portion 170 ais larger than the height H1′ of the second portion 170 b, and theheight H1′ of the second portion 170 b is equal to the height H2 of thesecond spacer 180. In other words, after hard baking, the height H1 ofthe first portion 170 a of the first spacer 170 is larger than theheight H2 of the second spacer 180.

In the embodiment of FIG. 7A to FIG. 7D, a sequence of the stepsincluded in the exposure process and the development process performedon the photoresist material layer 150 is Steps (a)/(b)/(c), for example.However, the invention is not limited thereto. In other embodiments, thesequence of the steps included in the exposure process and thedevelopment process performed on the photoresist material layer 150 mayalso be Steps (c)/(b)/(a), Steps (a)/(c)/(b), or Steps (c)/(a)/(b), aslong as Step (a) precedes Step (c) or Step (c) precedes Step (a).Various sequences of Steps (a), (b), and (c) may be inferred by thoseskilled in the art from the teaching of the embodiment of FIG. 7A toFIG. 7D. Thus, details are not illustrated here.

FIG. 8A is a schematic top view of a device substrate according to thefourth embodiment of the invention. FIG. 8B is a schematiccross-sectional view of the device substrate of FIG. 8A along the lineI-I′. The embodiment of FIG. 8A to FIG. 8B is similar to the embodimentof FIG. 3A to FIG. 3B. Therefore, identical or similar elements aredenoted by the same or similar reference numerals, which will not bedescribed again hereinafter. With reference to FIG. 8A and FIG. 8B, adifference between the embodiment of FIG. 8A to FIG. 8B and theembodiment of FIG. 3A to FIG. 3B is that: in a device substrate 200B,each of the second spacers 280 has a first portion 280 a and a secondportion 280 b connected with a periphery of the first portion 280 a, anda height H2 of the first portion 280 a is larger than a height H2′ ofthe second portion 280 b. Moreover, the patterned light-shielding layer120 further has a plurality of second exposure openings 126.

Each of the second exposure openings 126 is located between two adjacentpixel openings 122. In this embodiment, a shape of the second exposureopening 126 is a circular annular opening, for example. However, theinvention is not limited thereto. In other embodiments, the shape of thesecond exposure opening 126 in FIG. 8A may be an annular opening (ring)of circular, elliptic, rectangular, square, triangular, rhombic,polygonal, or may be an annular opening of other suitable shapes, forexample.

A plurality of the first spacers 270 and a plurality of the secondspacers 280 are disposed on the substrate 110. The vertical projectionof the first spacer 270 respectively overlaps the first exposure opening124. Each of the second spacers 280 includes the first portion 280 a andthe second portion 280 b connected with the periphery of the firstportion 280 a. The vertical projection of the first portion 280 a on thepatterned light-shielding layer 120 is located outside the correspondingfirst exposure opening 124 and second exposure opening 126, and thevertical projection of the second portion 280 b on the patternedlight-shielding layer 120 respectively overlaps the corresponding secondexposure opening 126. More specifically, the first spacers 270 and thesecond spacers 280 are disposed on the transparent layer 140. The firstspacers 270 are disposed corresponding to the first exposure openings124 to cover the first exposure openings 124. The second portion 280 ais disposed corresponding to the second exposure opening 126 to coverthe second exposure opening 126 while the first portion 280 a does notoverlap the first exposure opening 124 and the second exposure opening126. In this embodiment, when the device substrate 200B is a colorfilter substrate of a touch display panel, the first spacers 270 aresecondary spacers and the second spacers 280 are main spacers, forexample, for maintaining a gap between the color filter substrate andthe active device array substrate. The height H2 of the first portion280 a of each of the second spacers 280 is in a range of 1 micrometer to6 micrometers, and preferably in a range of 2.5 micrometers to 4micrometers, for example. Moreover, in this embodiment, the material ofthe first spacers 270 and the second spacers 280 is a positivephotoresist. The height H2 of the first portion 280 a is larger than theheight H2′ of the second portion 280 b, and the height H2′ of the secondportion 280 b is equal to the height H1 of the first spacer 270. Aheight difference (H2−H2′) between the first portion 280 a and thesecond portion 280 b is larger than 0.2 micrometer, for example. Inother words, the cross-sectional shape of the second spacer 280 in FIG.8B is stepped, for example. The material of the first spacer 270 and thesecond spacer 280 is a photosensitive material, for example. Moreover,the invention is not intended to limit the color, size, number, shape,and cross-sectional shape of the first spacers 270 or the second spacers280.

It is also noted that each of the first spacers 270 has the top portion272, the connection portion 274, and the bottom portion 276. In thisembodiment, the relationship between the decomposition strengths of thephotosensitive material of the first spacer 270 is: the bottom portion276>the connection portion 274>the top portion 272. Each of the firstportions 280 a has a top portion 282 a, a connection portion 284 a, anda bottom portion 286 a, and each of the second portions 280 b has a topportion 282 b, a connection portion 284 b, and a bottom portion 286 b.In this embodiment, a relationship between decomposition strengths ofthe photosensitive material of the first portion 280 a is: the bottomportion 286 a=the connection portion 284 a=the top portion 282 a (i.e.no exposure; all are development-resistant layers), and a relationshipbetween decomposition strengths of the photosensitive material of thesecond portion 280 b is: the bottom portion 286 b>the connection portion284 b>the top portion 282 b (i.e. functional groups reactive to thedeveloper increase). In other words, in this embodiment, thecross-linking densities of the photosensitive materials of the secondportion 280 b and the first spacer 270 have the same distribution.

FIG. 9A to FIG. 9D are schematic cross-sectional views showing afabricating method of the device substrate of FIG. 8B. The embodiment ofFIG. 9A to FIG. 9D is similar to the embodiment of FIG. 4A to FIG. 4D.Therefore, identical or similar elements are denoted by the same orsimilar reference numerals, which will not be described againhereinafter.

With reference to FIG. 9A, the structures and fabricating methods ofFIG. 9A and FIG. 4A are the same. Therefore, identical or similarelements are denoted by the same or similar reference numerals, whichwill not be described again hereinafter. In this embodiment, thematerial of the photoresist material layer 250 includes a photosensitivematerial, and the photoresist material layer 250 is a positivephotoresist. Moreover, the patterned light-shielding layer 120 furtherhas a plurality of the second exposure openings 126, and the transparentlayer 140 is also filled in the second exposure openings 126.

Next, as shown in FIG. 9B to FIG. 9D, an exposure process and adevelopment process are performed on the photoresist material layer 250to form the first spacers 270 and the second spacers 280 on thesubstrate 110. In the following paragraphs, Steps (a), (b), and (c)included in the exposure process and the development process performedon the photoresist material layer 250 are explained in detail.

With reference to FIG. 9B, Step (a) is to provide a mask 460 above thephotoresist material layer 250, so as to perform the exposure UV1 on thephotoresist material layer 250 with the mask 460 as a shielding mask.Step (a) may also be called a front exposure. In this embodiment, Step(a) is a saturated exposure, and because the photoresist material layer250 is a positive photoresist, the decomposition strength of thephotosensitive material of a portion of the photoresist material layer250 that receives the exposure UV1 is increased (i.e. functional groupsreactive to the developer increase) to form the photoresist materiallayer 250′ that is development-intolerant (i.e. will be removed in thedevelopment step). Further, a portion of a vertical projection of thephotoresist material layer 250 that does not receive the exposure UV1respectively overlaps the first exposure opening 124, and a portion ofthe vertical projection respectively overlaps the second exposureopening 126. Other portions of the vertical projection are locatedoutside the first exposure opening 124 and the second exposure opening126 respectively.

With reference to FIG. 9C, Step (b) is to perform the exposure UV2 onthe photoresist material layer 250 with the patterned light-shieldinglayer 120 as a shielding mask. Step (b) may also be called a backexposure. In this embodiment, Step (b) is an unsaturated exposure, andbecause the photoresist material layer 250 is a positive photoresist,the decomposition strength of the photosensitive material of a portionof the photoresist material layer 250 that receives the exposure UV2 isslightly increased (i.e. functional groups reactive to the developerslightly increase) to form the photoresist material layer 250″ that hasweak development resistance (i.e. will be partially removed in thedevelopment step).

With reference to FIG. 9D, Step (c) is to develop the photoresistmaterial layer 250 after the exposure UV2. Step (c) may also be called adevelopment. In this embodiment, the development-intolerant photoresistmaterial layer 250′ is removed completely, the photoresist materiallayer 250″ that has weak development resistance is partially removed,and the photoresist material layer 250 that does not receive theexposures UV1 and UV2 is not removed. Therefore, in Step (c), thephotoresist material layer 250″ that is not removed forms the firstspacers 270 and the second portions 280 b of the second spacers 280, andthe photoresist material layer 250 that is not removed forms the firstportions 280 a of the second spacers 280. Accordingly, a plurality ofthe first spacers 270 and a plurality of the second spacers 280 areformed by Step (a), Step (b), and Step (c). The vertical projection ofthe first spacer 270 respectively overlaps the first exposure opening124. Each of the second spacers 280 includes the first portion 280 a andthe second portion 280 b connected with the periphery of the firstportion 280 a. The vertical projection of the first portion 280 a on thepatterned light-shielding layer 120 is located outside the correspondingfirst exposure opening 124 and second exposure opening 126, and thevertical projection of the second portion 280 b on the patternedlight-shielding layer 120 respectively overlaps the corresponding secondexposure opening 126. Furthermore, each of the first spacers 270 has thetop portion 272, the connection portion 274, and the bottom portion 276.Each of the first portions 280 a has the top portion 282 a, theconnection portion 284 a, and the bottom portion 286 a, and each of thesecond portions 280 b has the top portion 282 b, the connection portion284 b, and the bottom portion 286 b.

In this embodiment, because the first spacers 270 only receive theunsaturated back exposure, the relationship between the decompositionstrengths of the photosensitive material of the first spacers 270 is:the bottom portion 276>the connection portion 274>the top portion 272.Further, because the first portions 280 a of the second spacers 280 donot receive the front exposure or back exposure, the relationshipbetween the decomposition strengths of the photosensitive material ofthe first portions 280 a is: the bottom portion 286 a=the connectionportion 284 a=the top portion 282 a. Because the second portions 280 bof the second spacers 280 only receive the unsaturated back exposure,the relationship between the decomposition strengths of thephotosensitive material of the second portions 280 b is: the bottomportion 286 b>the connection portion 284 b>the top portion 282 b.Accordingly, after hard baking, the height H2 of the first portion 280 ais larger than the height H2′ of the second portion 280 b, and theheight H2′ of the second portion 280 b is equal to the height H1 of thefirst spacer 270. In other words, after hard baking, the height H2 ofthe first portion 280 a of the second spacer 280 is larger than theheight H1 of the first spacer 270.

In the embodiment of FIG. 9A to FIG. 9D, a sequence of the stepsincluded in the exposure process and the development process performedon the photoresist material layer 250 is Steps (a)/(b)/(c) (i.e. Step(a) precedes Step (b), and Step (c) is after Step (a) and Step (b)), forexample. However, the invention is not limited thereto. In otherembodiments, the sequence of the steps included in the exposure processand the development process performed on the photoresist material layer250 may also be Steps (b)/(a)/(c) (i.e. Step (b) precedes Step (a), andStep (c) is after Step (a) and Step (b)).

Various sequences of Steps (a), (b), and (c) may be inferred by thoseskilled in the art from the teaching of the embodiment of FIG. 9A toFIG. 9D. Thus, details are not illustrated here.

FIG. 10A is a schematic top view of a device substrate according to thefifth embodiment of the invention. FIG. 10B is a schematiccross-sectional view of the device substrate of FIG. 10A along the lineI-I′. The embodiment of FIG. 10A to FIG. 10B is similar to theembodiment of FIG. 1A to FIG. 1B. Therefore, identical or similarelements are denoted by the same or similar reference numerals, whichwill not be described again hereinafter. With reference to FIG. 10A andFIG. 10B, a difference between the embodiment of FIG. 10A to FIG. 10Band the embodiment of FIG. 1A to FIG. 1B is that: a device substrate100C further includes a plurality of third spacers 190, and a height H3of the third spacer 190 is between the height H1 of the first spacer 170and the height H2 of the second spacer 180. Moreover, the patternedlight-shielding layer 120 further has a plurality of translucentpatterns 128.

Each of the translucent patterns 128 is located between two adjacentpixel openings 122. In this embodiment, a shape of the translucentpattern 128 is circular and a width W3 thereof (i.e. diameter) is in arange of 4 micrometers to 40 micrometers, for example. However, it isnoted that the invention is not limited thereto. The scope of theinvention covers various embodiments as long as one of the translucentpatterns 128 (or the first exposure openings 124) and one of the pixelopenings 122 have different areas and/or shapes. The shape of thetranslucent pattern 128 in FIG. 10A may be circular, elliptic,rectangular, square, triangular, rhombic, polygonal, or other suitableshapes, for example. In this embodiment, a material of the translucentpattern 128 is the same as the material of one of the color filterpatterns 130, for example, and the translucent pattern 128 and the colorfilter pattern 130 may belong to the same layer. That is, thetranslucent pattern 128 may be a red filter film, a green filter film,or a blue filter film. However, it is noted that the invention is notlimited thereto. In other embodiments, the material of the translucentpattern 128 may be different from the material of the color filterpattern 130, or the translucent pattern 128 and the color filter pattern130 may belong to different layers. A transmittance of the translucentpattern 128 is lower than a transmittance of the first exposure opening124.

The third spacers 190 are disposed on the substrate 110, and verticalprojections of the third spacers 190 on the patterned light-shieldinglayer 120 respectively overlap the translucent patterns 128. Morespecifically, the third spacers 190 are disposed on the transparentlayer 140 corresponding to the translucent patterns 128, so as to coverthe translucent patterns 128. In this embodiment, when the devicesubstrate 100C is a color filter substrate of a touch display panel, thethird spacers 190 are main spacers or secondary spacers, for example.Moreover, in this embodiment, the material of the first spacers 170, thesecond spacers 180, and the third spacers 190 is a negative photoresist.The height H1 of the first spacer 170 is larger than the height H2 ofthe second spacer 180, and the height H3 of the third spacer 190 isbetween the height H1 of the first spacer 170 and the height H2 of thesecond spacer 180. The material of the third spacer 190 is aphotosensitive material, for example. Moreover, the invention is notintended to limit the color, size, number, shape, and cross-sectionalshape of the third spacers 190.

It is noted that each of the third spacers 190 has a top portion 192, aconnection portion 194, and a bottom portion 196. The bottom portion 196is a portion close to the translucent pattern 128, the top portion 192is a portion away from the translucent pattern 128, and the connectionportion 194 is located between the top portion 192 and the bottomportion 196. In this embodiment, a relationship between cross-linkingdensities (or cross-linking strengths) of the photosensitive material ofthe third spacer 190 is: the bottom portion 196>the top portion 192>theconnection portion 194.

FIG. 11A to FIG. 11D are schematic cross-sectional views showing afabricating method of the device substrate of FIG. 10B. The embodimentof FIG. 11A to FIG. 11D is similar to the embodiment of FIG. 2A to FIG.2D. Therefore, identical or similar elements are denoted by the same orsimilar reference numerals, which will not be described againhereinafter.

With reference to FIG. 11A, the structures and fabricating methods ofFIG. 11A and FIG. 2A are the same or similar. Therefore, identical orsimilar elements are denoted by the same or similar reference numerals,which will not be described again hereinafter. In this embodiment, thematerial of the photoresist material layer 150 includes a photosensitivematerial, and the photoresist material layer 150 is a negativephotoresist. Further, the patterned light-shielding layer 120 furtherhas a plurality of the translucent patterns 128, and each of thetranslucent patterns 128 (or the first exposure openings 124) and eachof the pixel openings 122 have different areas and/or shapes. In thisembodiment, the translucent patterns 128 and one of the color filterpatterns 130 are formed in the same fabricating step, for example.However, it is noted that the invention is not limited thereto. In otherembodiments, the translucent patterns 128 may be a layer that is formedadditionally. Moreover, the transparent layer 140 also covers thetranslucent patterns 128.

Next, as shown in FIG. 11B to FIG. 11D, an exposure process and adevelopment process are performed on the photoresist material layer 150to form the first spacers 170, the second spacers 180, and the thirdspacers 190 on the substrate 110. In the following paragraphs, Steps(a), (b), and (c) included in the exposure process and the developmentprocess performed on the photoresist material layer 150 are explained indetail.

With reference to FIG. 11B, Step (a) is to provide a mask 560 on thephotoresist material layer 150, so as to perform the exposure UV1 on thephotoresist material layer 150 with the mask 560 as a shielding mask.Step (a) may also be called a front exposure. In this embodiment, Step(a) is an unsaturated exposure, and because the photoresist materiallayer 150 is a negative photoresist, the cross-linking density of thephotosensitive material of a portion of the photoresist material layer150 that receives the exposure UV1 is increased to form the top portion172, the top portion 182, and the top portion 192 that are highdevelopment-resistant (i.e. will not be removed in the developmentstep). The vertical projection of the top portion 172 respectivelyoverlaps the first exposure opening 124. The vertical projection of thetop portion 182 is located outside the first exposure opening 124 andthe translucent pattern 128 respectively. The vertical projection of thetop portion 192 respectively overlaps the translucent pattern 128.

With reference to FIG. 11C, Step (b) is to develop the photoresistmaterial layer 150 after the exposure UV1. Step (b) may also be called adevelopment. In this embodiment, the portion of the photoresist materiallayer 150 covered by the top portion 172, the top portion 182, and thetop portion 192 which have high development-resistant is not removed inStep (b) while the uncovered portion of the photoresist material layer150 is removed. In Step (b), the portion of the photoresist materiallayer 150 that is not removed forms the connection portion 184 and thebottom portion 186. Accordingly, the second spacers 180 are formed byStep (a) and Step (b), and the vertical projections of the secondspacers 180 are respectively outside the first exposure openings 124 andthe translucent patterns 128.

With reference to FIG. 11D, Step (c) is to perform the exposure UV2 onthe photoresist material layer 150 with the patterned light-shieldinglayer 120 as a shielding mask. Step (c) may also be called a backexposure. In this embodiment, Step (c) is a saturated exposure, andbecause the photoresist material layer 150 is a negative photoresist,the cross-linking density of the photosensitive material of a portion ofthe photoresist material layer 150 that receives the exposure UV2 isincreased to form the bottom portion 176 and the bottom portion 196through the first exposure openings 124 and the translucent patterns 128respectively. In Step (c), the portion of the photoresist material layer150 that does not receive the exposure UV2 forms the connection portion174 and the connection portion 194. However, it is noted that theinvention is not limited thereto. In other embodiments, the connectionportion 174, the bottom portion 176, the connection portion 194, and thebottom portion 196 may all receive the exposure UV2. Accordingly, aplurality of the first spacers 170 and a plurality of the third spacers190 are formed by Step (a), Step (b), and Step (c). The verticalprojections of the first spacers 170 respectively overlap the firstexposure openings 124, and the vertical projections of the third spacers190 on the patterned light-shielding layer 120 respectively overlap thetranslucent patterns 128. In addition, each of the first spacers 170 hasthe top portion 172, the connection portion 174, and the bottom portion176, and each of the third spacers 190 has the top portion 192, theconnection portion 194, and the bottom portion 196.

In this embodiment, because the second spacers 180 only receive theunsaturated front exposure, the relationship between the cross-linkingdensities of the photosensitive material of the second spacers 180 is:the top portion 182>the connection portion 184=the bottom portion 186.Further, because the first spacers 170 receive the unsaturated frontexposure and saturated back exposure, the relationship between thecross-linking densities of the photosensitive material of the firstspacers 170 is: the bottom portion 176>the top portion 172>theconnection portion 174. Because the third spacers 190 receive theunsaturated front exposure and saturated back exposure, the relationshipbetween the cross-linking densities of the photosensitive material ofthe third spacers 190 is: the bottom portion 196>the top portion 192>theconnection portion 194. In addition, because the bottom portion 176 andthe bottom portion 196 are respectively formed by the exposure UV2through the first exposure openings 124 and the translucent patterns128, and the transmittance of the translucent patterns 128 is lower thanthe transmittance of the first exposure openings 124, the height H3 ofthe third spacer 190 is smaller than the height H1 of the first spacer170. Accordingly, after hard baking, the height H1 of the first spacer170 is larger than the height H2 of the second spacer 180, and theheight H3 of the third spacer 190 is between the height H1 of the firstspacer 170 and the height H2 of the second spacer 180.

In the embodiment of FIG. 11A to FIG. 11D, a sequence of the stepsincluded in the exposure process and the development process performedon the photoresist material layer 150 is Steps (a)/(b)/(c), for example.However, the invention is not limited thereto. In other embodiments, thesequence of the steps included in the exposure process and thedevelopment process performed on the photoresist material layer 150 mayalso be Steps (c)/(b)/(a), Steps (a)/(c)/(b), or Steps (c)/(a)/(b), aslong as Step (a) precedes Step (c) or Step (c) precedes Step (a).Various sequences of Steps (a), (b), and (c) may be inferred by thoseskilled in the art from the teaching of the embodiment of FIG. 11A toFIG. 11D. Thus, details are not illustrated here.

FIG. 12A is a schematic top view of a device substrate according to thesixth embodiment of the invention. FIG. 12B is a schematiccross-sectional view of the device substrate of FIG. 12A along the lineI-I′. The embodiment of FIG. 12A to FIG. 12B is similar to theembodiment of FIG. 3A to FIG. 3B. Therefore, identical or similarelements are denoted by the same or similar reference numerals, whichwill not be described again hereinafter. With reference to FIG. 12A andFIG. 12B, a difference between the embodiment of FIG. 12A to FIG. 12Band the embodiment of FIG. 3A to FIG. 3B is that: a device substrate200C further includes a plurality of third spacers 290, and a height H3of the third spacer 290 is between the height H1 of the first spacer 270and the height H2 of the second spacer 280. Moreover, the patternedlight-shielding layer 120 further has a plurality of the translucentpatterns 128. Details of the translucent patterns 128 have beendescribed in the embodiment of FIG. 10A to FIG. 11D and thus are notrepeated hereinafter.

The third spacers 290 are disposed on the substrate 110, and verticalprojections of the third spacers 290 on the patterned light-shieldinglayer 120 respectively overlap the translucent patterns 128. Morespecifically, the third spacers 290 are disposed on the transparentlayer 140 corresponding to the translucent patterns 128, so as to coverthe translucent patterns 128. In this embodiment, when the devicesubstrate 200C is a color filter substrate of a touch display panel, thethird spacers 290 are main spacers or secondary spacers, for example.Moreover, in this embodiment, the material of the first spacers 270, thesecond spacers 280, and the third spacers 290 is a positive photoresist.The height H2 of the second spacer 280 is larger than the height H1 ofthe first spacer 270, and the height H3 of the third spacer 290 isbetween the height H1 of the first spacer 270 and the height H2 of thesecond spacer 280. The material of the third spacer 290 is aphotosensitive material, for example. Moreover, the invention is notintended to limit the color, size, number, shape, and cross-sectionalshape of the third spacers 290.

It is noted that each of the third spacers 290 has a top portion 292, aconnection portion 294, and a bottom portion 296. The bottom portion 296is a portion close to the translucent pattern 128, the top portion 292is a portion away from the translucent pattern 128, and the connectionportion 294 is located between the top portion 292 and the bottomportion 296. In this embodiment, a relationship between decompositionstrengths of the photosensitive material of the third spacer 290 is: thebottom portion 296>the connection portion 294>the top portion 292(equivalent to the relationship between the cross-linking densities,which is the top portion 292>the connection portion 294>the bottomportion 296).

FIG. 13A to FIG. 13D are schematic cross-sectional views showing afabricating method of the device substrate of FIG. 12B. The embodimentof FIG. 13A to FIG. 13D is similar to the embodiment of FIG. 4A to FIG.4D. Therefore, identical or similar elements are denoted by the same orsimilar reference numerals, which will not be described againhereinafter.

With reference to FIG. 13A, the structures and fabricating methods ofFIG. 13A and FIG. 4A are the same or similar. Therefore, identical orsimilar elements are denoted by the same or similar reference numerals,which will not be described again hereinafter. In this embodiment, thematerial of the photoresist material layer 250 includes a photosensitivematerial, and the photoresist material layer 250 is a positivephotoresist. Moreover, the patterned light-shielding layer 120 furtherhas a plurality of the translucent patterns 128. Details of thetranslucent patterns 128 have been described in the embodiment of FIG.10A to FIG. 11D and thus are not repeated hereinafter.

Next, as shown in FIG. 13B to FIG. 13D, an exposure process and adevelopment process are performed on the photoresist material layer 250to form the first spacers 270, the second spacers 280, and the thirdspacers 290 on the substrate 110. In the following paragraphs, Steps(a), (b), and (c) included in the exposure process and the developmentprocess performed on the photoresist material layer 250 are explained indetail.

With reference to FIG. 13B, Step (a) is to provide a mask 660 on thephotoresist material layer 250, so as to perform the exposure UV1 on thephotoresist material layer 250 with the mask 660 as a shielding mask.Step (a) may also be called a front exposure. In this embodiment, Step(a) is a saturated exposure, and because the photoresist material layer250 is a positive photoresist, the decomposition strength of thephotosensitive material of a portion of the photoresist material layer250 that receives the exposure UV1 is increased (i.e. functional groupsreactive to the developer increase) to form the photoresist materiallayer 250′ that is development-intolerant (i.e. will be removed in thedevelopment step). Further, a portion of the vertical projection of thephotoresist material layer 250 that does not receive the exposure UV1respectively overlaps the first exposure opening 124, and a portion ofthe vertical projection respectively overlaps the translucent pattern128. Other portions of the vertical projection are located outside thefirst exposure opening 124 and the translucent pattern 128 respectively.

With reference to FIG. 13C, Step (b) is to perform the exposure UV2 onthe photoresist material layer 250 with the patterned light-shieldinglayer 120 as a shielding mask. Step (b) may also be called a backexposure. In this embodiment, Step (b) is an unsaturated exposure, andbecause the photoresist material layer 250 is a positive photoresist,the decomposition strength of the photosensitive material of a portionof the photoresist material layer 250 that receives the exposure UV2through the first exposure openings 124 is slightly increased (i.e.functional groups reactive to the developer slightly increase) to formthe photoresist material layer 250″ that has weak development resistance(i.e. will be partially removed in the development step). Further, thedecomposition strength of the photosensitive material of a portion ofthe photoresist material layer 250 that receives the exposure UV2through the translucent patterns 128 is slightly increased as well, soas to form a photoresist material layer 250′″ that has weak developmentresistance. Because the transmittance of the translucent patterns 128 islower than the transmittance of the first exposure openings 124, thedecomposition strength of the photosensitive material of the photoresistmaterial layer 250′″ is smaller than the decomposition strength of thephotosensitive material of the photoresist material layer 250″.

With reference to FIG. 13D, Step (c) is to develop the photoresistmaterial layer 250 after the exposure UV2. Step (c) may also be called adevelopment. In this embodiment, the development-intolerant photoresistmaterial layer 250′ is removed completely, the photoresist materiallayer 250″ and the photoresist material layer 250′″ that have weakdevelopment resistance are partially removed, and the photoresistmaterial layer 250 that does not receive the exposures UV1 and UV2 isnot removed. Because the decomposition strength of the photosensitivematerial of the photoresist material layer 250′″ is smaller than thedecomposition strength of the photosensitive material of the photoresistmaterial layer 250″, the portion removed from the photoresist materiallayer 250′″ is smaller than the portion removed from photoresistmaterial layer 250″. Therefore, in Step (c), the photoresist materiallayer 250″ that is not removed forms the first spacers 270, thephotoresist material layer 250 that is not removed forms the secondspacers 280, and the photoresist material layer 250′″ that is notremoved forms the third spacers 290. Accordingly, a plurality of thefirst spacers 270 and a plurality of the third spacers 290 are formed byStep (a), Step (b), and Step (c). The vertical projections of the firstspacers 270 respectively overlap the first exposure openings 124, andthe vertical projections of the third spacers 290 on the patternedlight-shielding layer 120 respectively overlap the translucent patterns128. A plurality of the second spacers 280 are formed by Step (a) andStep (c), and the vertical projections of the second spacers 280 arerespectively outside the first exposure openings 124. Furthermore, eachof the first spacers 270 has the top portion 272, the connection portion274, and the bottom portion 276. Each of the second spacers 280 has thetop portion 282, the connection portion 284, and the bottom portion 286,and each of the third spacers 290 has the top portion 292, theconnection portion 294, and the bottom portion 296.

In this embodiment, because the first spacers 270 only receive theunsaturated back exposure, the relationship between the decompositionstrengths of the photosensitive material of the first spacers 270 is:the bottom portion 276>the connection portion 274>the top portion 272.Furthermore, because the second spacers 280 do not receive the frontexposure or the back exposure, the relationship between thedecomposition strengths of the photosensitive material of the secondspacers 280 is: the bottom portion 286=the connection portion 284=thetop portion 282. In addition, because the third spacers 290 only receivethe unsaturated back exposure, the relationship between thedecomposition strengths of the photosensitive material of the thirdspacers 290 is: the bottom portion 296>the connection portion 294>thetop portion 292. Besides, because the first spacers 270 and the thirdspacers 290 are respectively formed by the exposure UV2 through thefirst exposure openings 124 and the translucent patterns 128, and thetransmittance of the translucent patterns 128 is lower than thetransmittance of the first exposure openings 124, the height H3 of thethird spacer 290 is larger than the height H1 of the first spacer 270.Accordingly, after hard baking, the height H2 of the second spacer 280is larger than the height H1 of the first spacer 270, and the height H3of the third spacer 290 is between the height H1 of the first spacer 270and the height H2 of the second spacer 280.

In the embodiment of FIG. 13A to FIG. 13D, a sequence of the stepsincluded in the exposure process and the development process performedon the photoresist material layer 250 is Steps (a)/(b)/(c) (i.e. Step(a) precedes Step (b), and Step (c) is after Step (a) and Step (b)), forexample. However, the invention is not limited thereto. In otherembodiments, the sequence of the steps included in the exposure processand the development process performed on the photoresist material layer250 may also be Steps (b)/(a)/(c) (i.e. Step (b) precedes Step (a), andStep (c) is after Step (a) and Step (b)). Various sequences of Steps(a), (b), and (c) may be inferred by those skilled in the art from theteaching of the embodiment of FIG. 13A to FIG. 13D. Thus, details arenot illustrated here.

FIG. 14A is a schematic top view of a device substrate according to theseventh embodiment of the invention. FIG. 14B is a schematiccross-sectional view of the device substrate of FIG. 14A along the lineI-I″. The embodiment of FIG. 14A to FIG. 14B is similar to theembodiment of FIG. 10A to FIG. 10B. Therefore, identical or similarelements are denoted by the same or similar reference numerals, whichwill not be described again hereinafter. With reference to FIG. 14A andFIG. 14B, a difference between the embodiment of FIG. 14A to FIG. 14Band the embodiment of FIG. 10A to FIG. 10B is that: in a devicesubstrate 100D, the second spacer 180 is connected with the first spacer170 and the third spacer 190.

Details of the first spacer 170, the second spacer 180, and the thirdspacer 190 have been specified in the above embodiments, and the sameelements are denoted by the same reference numerals, which will not bedescribed again hereinafter. The following paragraphs only explain thedifference. In this embodiment, the second spacer 180 is connected withthe first spacer 170 and the third spacer 190. The shape of the secondspacer 180 in FIG. 14A is a rectangular block having two circularopenings (not shown), for example. The shapes of the first spacer 170and the third spacer 190 are circular, for example, and the first spacer170 and the third spacer 190 are respectively located in the circularopenings. However, the invention is not particularly limited to theabove, as long as the second spacer 180 is connected with the firstspacer 170 and the third spacer 190. For example, as shown in FIG. 14B,the first spacer 170 and the third spacer 190 may be embedded in thesecond spacer 180. Moreover, the invention is not intended to limit thecolor, size, number, shape, and cross-sectional shape of the firstspacer 170, the second spacer 180, or the third spacer 190. In otherembodiments, the shape of the first spacer 170, the second spacer 180,or the third spacer 190 may be circular, elliptic, rectangular, square,triangular, rhombic, polygonal, or other suitable shapes, for example.

FIG. 15A to FIG. 15D are schematic cross-sectional views showing afabricating method of the device substrate of FIG. 14B. The embodimentof FIG. 15A to FIG. 15D is similar to the embodiment of FIG. 11A to FIG.11D. Therefore, identical or similar elements are denoted by the same orsimilar reference numerals, which will not be described againhereinafter.

With reference to FIG. 15A, the structures and fabricating methods ofFIG. 15A and FIG. 11A are the same. Therefore, identical elements aredenoted by the same reference numerals, which will not be describedagain hereinafter. In this embodiment, the material of the photoresistmaterial layer 150 includes a photosensitive material, and thephotoresist material layer 150 is a negative photoresist.

Next, as shown in FIG. 15B to FIG. 15D, an exposure process and adevelopment process are performed on the photoresist material layer 150to form a plurality of the first spacers 170, a plurality of the secondspacers 180, and a plurality of the third spacers 190 on the substrate110. In the following paragraphs, Steps (a), (b), and (c) included inthe exposure process and the development process performed on thephotoresist material layer 150 are explained in detail.

With reference to FIG. 15B, Step (a) is to provide a mask 760 on thephotoresist material layer 150, so as to perform the exposure UV1 on thephotoresist material layer 150 with the mask 760 as a shielding mask.Step (a) may also be called a front exposure. In this embodiment, Step(a) is an unsaturated exposure, and because the photoresist materiallayer 150 is a negative photoresist, the cross-linking density of thephotosensitive material of a portion of the photoresist material layer150 that receives the exposure UV1 is increased to form the photoresistmaterial layer 150′ (including the top portion 172, the top portion 182,and the top portion 192) that is high development-resistant (i.e. willnot be removed in the development step). A portion (e.g. the top portion172) of the vertical projection of the photoresist material layer 150′respectively overlaps the first exposure opening 124, and a portion(e.g. the top portion 192) of the vertical projection respectivelyoverlaps the translucent pattern 128. Other portions (e.g. the topportion 182) of the vertical projection are located outside the firstexposure opening 124 and the translucent pattern 128 respectively.

With reference to FIG. 15C, Step (b) is to develop the photoresistmaterial layer 150 after the exposure UV1. Step (b) may also be called adevelopment. In this embodiment, because the development-resistantphotoresist material layer 150′ covers a portion of the photoresistmaterial layer 150, the portion of the photoresist material layer 150covered by the photoresist material layer 150′ is not removed in Step(b) while the uncovered portion of the photoresist material layer 150 isremoved.

With reference to FIG. 15D, Step (c) is to perform the exposure UV2 onthe photoresist material layer 150 with the patterned light-shieldinglayer 120 as a shielding mask. Step (c) may also be called a backexposure. In this embodiment, Step (c) is a saturated exposure, andbecause the photoresist material layer 150 is a negative photoresist,the cross-linking density of the photosensitive material of a portion ofthe photoresist material layer 150 that receives the exposure UV2 isincreased to form the bottom portion 176 and the bottom portion 196through the first exposure openings 124 and the translucent patterns 128respectively. In Step (c), a portion of the photoresist material layer150 that does not receive the exposure UV2 forms the connection portion174, the connection portion 194, the connection portion 184, and thebottom portion 186. Accordingly, a plurality of the first spacers 170and a plurality of the third spacers 190 are formed by Step (a), Step(b), and Step (c). The vertical projections of the first spacers 170respectively overlap the first exposure openings 124, and the verticalprojections of the third spacers 190 on the patterned light-shieldinglayer 120 respectively overlap the translucent patterns 128.Accordingly, a plurality of the second spacers 180 are formed by Step(a) and Step (b), and the vertical projections of the second spacers 180are respectively outside the first exposure openings 124 and thetranslucent patterns 128. Furthermore, each of the first spacers 170 hasthe top portion 172, the connection portion 174, and the bottom portion176. Each of the second spacers 180 has the top portion 182, theconnection portion 184, and the bottom portion 186, and each of thethird spacers 190 has the top portion 192, the connection portion 194,and the bottom portion 196. Moreover, after hard baking, the height H1of the first spacer 170 is larger than the height H2 of the secondspacer 180, and the height H3 of the third spacer 190 is between theheight H1 of the first spacer 170 and the height H2 of the second spacer180.

In the embodiment of FIG. 15A to FIG. 15D, a sequence of the stepsincluded in the exposure process and the development process performedon the photoresist material layer 150 is Steps (a)/(b)/(c), for example.However, the invention is not limited thereto. In other embodiments, thesequence of the steps included in the exposure process and thedevelopment process performed on the photoresist material layer 150 mayalso be Steps (c)/(b)/(a), Steps (a)/(c)/(b), or Steps (c)/(a)/(b), aslong as Step (a) precedes Step (c) or Step (c) precedes Step (a).Various sequences of Steps (a), (b), and (c) may be inferred by thoseskilled in the art from the teaching of the embodiment of FIG. 15A toFIG. 15D. Thus, details are not illustrated here.

FIG. 16A is a schematic top view of a device substrate according to theeighth embodiment of the invention. FIG. 16B is a schematiccross-sectional view of the device substrate of FIG. 16A along the lineI-I′. The embodiment of FIG. 16A to FIG. 16B is similar to theembodiment of FIG. 12A to FIG. 12B. Therefore, identical or similarelements are denoted by the same or similar reference numerals, whichwill not be described again hereinafter. With reference to FIG. 16A andFIG. 16B, a difference between the embodiment of FIG. 16A to FIG. 16Band the embodiment of FIG. 12A to FIG. 12B is that: in a devicesubstrate 200D, the first spacer 270 is connected with the second spacer280 and the third spacer 290.

Details of the first spacer 270, the second spacer 280, and the thirdspacer 290 have been specified in the above embodiments, and the sameelements are denoted by the same reference numerals, which will not bedescribed again hereinafter. The following paragraphs only explain thedifference. In this embodiment, the first spacer 270 is connected withthe second spacer 280 and the third spacer 290. The shape of the firstspacer 270 in FIG. 16A is a rectangular block having two circularopenings (not shown), for example. The shapes of the second spacer 280and the third spacer 290 are circular, for example, and the secondspacer 280 and the third spacer 290 are respectively located in thecircular openings of the first spacer 270. However, the invention is notparticularly limited to the above, as long as the first spacer 270 isconnected with the second spacer 280 and the third spacer 290. Forexample, as shown in FIG. 16B, the second spacer 280 and the thirdspacer 290 may be embedded in the first spacer 270. Moreover, theinvention is not intended to limit the color, size, number, shape, andcross-sectional shape of the first spacer 270, the second spacer 280, orthe third spacer 290. In other embodiments, the shape or the outline ofthe first spacer 270, the second spacer 280, or the third spacer 290 maybe circular, elliptic, rectangular, square, triangular, rhombic,polygonal, or other suitable shapes, for example.

FIG. 17A to FIG. 17D are schematic cross-sectional views showing afabricating method of the device substrate of FIG. 16B. The embodimentof FIG. 17A to FIG. 17D is similar to the embodiment of FIG. 13A to FIG.13D. Therefore, identical or similar elements are denoted by the same orsimilar reference numerals, which will not be described againhereinafter.

With reference to FIG. 17A, the structures and fabricating methods ofFIG. 17A and FIG. 13A are the same or similar. Therefore, identical orsimilar elements are denoted by the same or similar reference numerals,which will not be described again hereinafter. In this embodiment, thematerial of the photoresist material layer 250 includes a photosensitivematerial, and the photoresist material layer 250 is a positivephotoresist. Moreover, the translucent pattern 128 and a portion of thepatterned light-shielding layer 120 are located in the first exposureopening 124.

Next, as shown in FIG. 17B to FIG. 17D, an exposure process and adevelopment process are performed on the photoresist material layer 250to form the first spacers 270, the second spacers 280, and the thirdspacers 290 on the substrate 110. In the following paragraphs, Steps(a), (b), and (c) included in the exposure process and the developmentprocess performed on the photoresist material layer 250 are explained indetail.

With reference to FIG. 17B, Step (a) is to provide a mask 860 on thephotoresist material layer 250, so as to perform the exposure UV1 on thephotoresist material layer 250 with the mask 860 as a shielding mask.Step (a) may also be called a front exposure. In this embodiment, Step(a) is a saturated exposure, and because the photoresist material layer250 is a positive photoresist, the decomposition strength of thephotosensitive material of a portion of the photoresist material layer250 that receives the exposure UV1 is increased (i.e. functional groupsreactive to the developer increase) to form the photoresist materiallayer 250′ that is development-intolerant (i.e. will be removed in thedevelopment step). Further, a portion of the vertical projection of thephotoresist material layer 250 that does not receive the exposure UV1respectively overlaps the first exposure opening 124, and a portion ofthe vertical projection respectively overlaps the translucent pattern128. Other portions of the vertical projection are located outside thefirst exposure opening 124 and the translucent pattern 128 respectively.

With reference to FIG. 17C, Step (b) is to perform the exposure UV2 onthe photoresist material layer 250 with the patterned light-shieldinglayer 120 as a shielding mask. Step (b) may also be called a backexposure. In this embodiment, Step (b) is an unsaturated exposure, andbecause the photoresist material layer 250 is a positive photoresist,the decomposition strength of the photosensitive material of a portionof the photoresist material layer 250 that receives the exposure UV2through the first exposure openings 124 is slightly increased (i.e.functional groups reactive to the developer slightly increase) to formthe photoresist material layer 250″ that has weak development resistance(i.e. will be partially removed in the development step). Further, thedecomposition strength of the photosensitive material of a portion ofthe photoresist material layer 250 that receives the exposure UV2through the translucent patterns 128 is slightly increased as well, soas to form the photoresist material layer 250′″ that has weakdevelopment resistance. Because the transmittance of the translucentpatterns 128 is lower than the transmittance of the first exposureopenings 124, the decomposition strength of the photosensitive materialof the photoresist material layer 250′″ is smaller than thedecomposition strength of the photosensitive material of the photoresistmaterial layer 250″.

With reference to FIG. 17D, Step (c) is to develop the photoresistmaterial layer 250 after the exposure UV2. Step (c) may also be called adevelopment. In this embodiment, the development-intolerant photoresistmaterial layer 250′ is removed completely, the photoresist materiallayer 250″ and the photoresist material layer 250′″ that have weakdevelopment resistance are partially removed, and the photoresistmaterial layer 250 that does not receive the exposures UV1 and UV2 isnot removed. Because the decomposition strength of the photosensitivematerial of the photoresist material layer 250′″ is smaller than thedecomposition strength of the photosensitive material of the photoresistmaterial layer 250″, the portion removed from the photoresist materiallayer 250′″ is smaller than the portion removed from photoresistmaterial layer 250″. Therefore, in Step (c), the photoresist materiallayer 250″ that is not removed forms the first spacers 270, thephotoresist material layer 250 that is not removed forms the secondspacers 280, and the photoresist material layer 250′″ that is notremoved forms the third spacers 290. Accordingly, a plurality of thefirst spacers 270 and a plurality of the third spacers 290 are formed byStep (a), Step (b), and Step (c). The vertical projections of the firstspacers 270 respectively overlap the first exposure openings 124, andthe vertical projections of the third spacers 290 on the patternedlight-shielding layer 120 respectively overlap the translucent patterns128. Accordingly, a plurality of the second spacers 280 are formed byStep (a) and Step (c), and the vertical projections of the secondspacers 280 are respectively outside the first exposure openings 124 andthe translucent patterns 128. Furthermore, each of the first spacers 270includes the top portion 272, the connection portion 274, and the bottomportion 276. Each of the second spacers 280 includes the top portion282, the connection portion 284, and the bottom portion 286, and each ofthe third spacers 290 includes the top portion 292, the connectionportion 294, and the bottom portion 296. Moreover, after hard baking,the height H2 of the second spacer 280 is larger than the height H1 ofthe first spacer 270, and the height H3 of the third spacer 290 isbetween the height H1 of the first spacer 270 and the height H2 of thesecond spacer 280.

In the embodiment of FIG. 17A to FIG. 17D, a sequence of the stepsincluded in the exposure process and the development process performedon the photoresist material layer 250 is Steps (a)/(b)/(c) (i.e. Step(a) precedes Step (b), and Step (c) is after Step (a) and Step (b)), forexample. However, the invention is not limited thereto. In otherembodiments, the sequence of the steps included in the exposure processand the development process performed on the photoresist material layer250 may also be Steps (b)/(a)/(c) (i.e. Step (b) precedes Step (a), andStep (c) is after Step (a) and Step (b)). Various sequences of Steps(a), (b), and (c) may be inferred by those skilled in the art from theteaching of the embodiment of FIG. 17A to FIG. 17D. Thus, details arenot illustrated here.

In any of the above embodiments, the device substrate includes the firstand second spacers, or the first, second, and third spacers, forexample. However, the invention is not limited thereto. In otherembodiments, the device substrate may include the second and thirdspacers, or the first and third spacers, for example. Moreover, theinvention is not intended to limit the number of these spacers.Additionally, in any of the above embodiments, the spacer overlaps onefirst exposure opening, one second exposure opening, or one translucentpattern, for example. However, the invention is not limited thereto. Inother embodiments, the spacer may overlap at least one first exposureopening, at least one second exposure opening, or at least onetranslucent pattern. In other words, the invention is not intended tolimit the number of the exposure openings or translucent patterns thateach spacer overlaps. Moreover, the multiple translucent patterns 128may include at least one color to form the third spacers havingdifferent heights. For example, if the spacer is a negative photoresist,blue translucent patterns may be used to fabricate higher third spacersand green translucent patterns may be used to form lower third spacers.

In any of the above embodiments, if the spacer (e.g. the first spacer170, the second spacer 180, the third spacer 190, the first spacer 270,the second spacer 280, or the third spacer 290) is a negativephotoresist or a positive photoresist, the cross-linking densities ofthe photosensitive material of the spacer differ between the topportion, the connection portion, and the bottom portion. However, it isnoted that the invention is not limited thereto. The scope of theinvention covers various embodiments as long as the cross-linkingdensity of the photosensitive material of the connection portion issmaller than the cross-linking density of the photosensitive material ofat least one of the top portion and the bottom portion. In addition, inany of the above embodiments, a general mask (e.g. the mask 160, 260,360, 460, 560, 660, 760, or 860) is used as the shielding mask forperforming the front exposure on the photoresist material layer, forexample. However, the invention is not limited thereto. In otherembodiments, a phase shift mask, half tone mask, or gray tone mask maybe used as the shielding mask for performing the front exposure on thephotoresist material layer.

In conclusion, according to the device substrate and the fabricatingmethod of the invention, the patterned light-shielding layer has theexposure openings (or translucent patterns), and the exposure openingsand the pixel openings have different areas and/or shapes. Therefore, inaddition to using a general mask as the shielding mask for performingthe front exposure on the photoresist material layer, the patternedlight-shielding layer can serve as the shielding mask for performing theback exposure on the photoresist material layer, wherein the photoresistmaterial layer may be a negative or positive photoresist. Accordingly,by combining the steps of front exposure, back exposure, non-exposure,and development and controlling different exposure doses (saturated orunsaturated exposure), main spacers and secondary spacers havingdifferent heights can be fabricated and favorable level difference (i.e.height difference) control capability can be achieved. Thus, the devicesubstrate and the fabricating method of the invention have advantages oflower production costs and simpler fabricating processes. Furthermore,the device substrate and the fabricating method of the invention areapplicable to the fabrication of spacers with different structures (e.g.spacers having a rectangular or stepped cross-sectional shape).

It will be apparent to those skilled in the art that variousmodifications and variations can be made to the disclosed embodimentswithout departing from the scope or spirit of the invention. In view ofthe foregoing, it is intended that the disclosure covers modificationsand variations provided that they fall within the scope of the followingclaims and their equivalents.

What is claimed is:
 1. A fabricating method of a device substrate, comprising: providing a substrate; forming a patterned light-shielding layer on the substrate, wherein the patterned light-shielding layer has a plurality of pixel openings and a plurality of first exposure openings, and one of the first exposure openings and one of the pixel openings have different areas and/or shapes; forming a photoresist material layer on the patterned light-shielding layer; and performing a front exposure process, a development process, and a back exposure process on the photoresist material layer to form a plurality of first spacers on the substrate, wherein vertical projections of the first spacers respectively overlap the first exposure openings.
 2. The fabricating method according to claim 1, wherein the photoresist material layer is a negative photoresist, and the step of performing the front exposure process, the development process, and the back exposure process on the photoresist material layer comprises: (a) providing a mask on the photoresist material layer and exposing the photoresist material layer with the mask as a shielding mask; (b) developing the exposed photoresist material layer; and (c) exposing the photoresist material layer with the patterned light-shielding layer as a shielding mask, wherein a plurality of second spacers are formed by Step (a) and Step (b), and the first spacers are formed by Step (a), Step (b), and Step (c), wherein vertical projections of the second spacers are located outside the first exposure openings respectively, and a height of each of the first spacers is larger than a height of each of the second spacers, wherein the exposures in Step (a) and Step (c) have different exposure doses or different wavelengths.
 3. The fabricating method according to claim 2, wherein Step (a) precedes Step (c) or Step (c) precedes Step (a).
 4. The fabricating method according to claim 1, wherein the photoresist material layer is a positive photoresist, and the step of performing the front exposure process, the development process, and the back exposure process on the photoresist material layer comprises: (a) providing a mask on the photoresist material layer and exposing the photoresist material layer with the mask as a shielding mask; (b) exposing the photoresist material layer with the patterned light-shielding layer as a shielding mask; and (c) developing the exposed photoresist material layer, wherein a plurality of second spacers are formed by Step (a) and Step (c), and the first spacers are formed by Step (a), Step (b), and Step (c), wherein vertical projections of the second spacers are located outside the first exposure openings respectively, and a height of each of the second spacers is larger than a height of each of the first spacers.
 5. The fabricating method according to claim 4, wherein Step (a) precedes Step (b), and Step (c) is after Step (a) and Step (b).
 6. The fabricating method according to claim 4, wherein Step (b) precedes Step (a), and Step (c) is after Step (a) and Step (b).
 7. The fabricating method according to claim 1, wherein the photoresist material layer is a negative photoresist, and the step of performing the front exposure process, the development process, and the back exposure process on the photoresist material layer comprises: (a) providing a mask on the photoresist material layer and exposing the photoresist material layer with the mask as a shielding mask; (b) developing the exposed photoresist material layer; and (c) exposing the photoresist material layer with the patterned light-shielding layer as a shielding mask, wherein a plurality of second spacers are formed by Step (a) and Step (b), the first spacers are formed by Step (a), Step (b), and Step (c), and vertical projections of the second spacers are located outside the first exposure openings respectively, wherein each of the first spacers has a first portion and a second portion connected with a periphery of the first portion, a vertical projection of the first portion on the patterned light-shielding layer overlaps the corresponding first exposure opening, a vertical projection of the second portion on the patterned light-shielding layer is located outside the corresponding first exposure opening, a height of each of the first spacers is larger than a height of each of the second spacers, and a height of the first portion is larger than a height of the second portion.
 8. The fabricating method according to claim 7, wherein Step (a) precedes Step (c) or Step (c) precedes Step (a).
 9. The fabricating method according to claim 1, wherein the patterned light-shielding layer further has a plurality of second exposure openings, and the photoresist material layer is a positive photoresist and the step of performing the front exposure process, the development process, and the back exposure process on the photoresist material layer comprises: (a) providing a mask on the photoresist material layer and exposing the photoresist material layer with the mask as a shielding mask; (b) exposing the photoresist material layer with the patterned light-shielding layer as a shielding mask; and (c) developing the exposed photoresist material layer, wherein the first spacers and a plurality of second spacers are formed by Step (a), Step (b), and Step (c), and vertical projections of the second spacers are located outside the first exposure openings respectively, wherein each of the second spacers has a first portion and a second portion connected with a periphery of the first portion, a vertical projection of the second portion on the patterned light-shielding layer overlaps the corresponding second exposure opening, a height of each of the second spacers is larger than a height of each of the first spacers, and a height of the first portion is larger than a height of the second portion.
 10. The fabricating method according to claim 9, wherein Step (a) precedes Step (b), and Step (c) is after Step (a) and Step (b).
 11. The fabricating method according to claim 9, wherein Step (b) precedes Step (a), and Step (c) is after Step (a) and Step (b).
 12. The fabricating method according to claim 1, wherein the patterned light-shielding layer further has a plurality of translucent patterns, and the photoresist material layer is a negative photoresist, wherein the step of performing the front exposure process, the development process, and the back exposure process on the photoresist material layer comprises: (a) providing a mask on the photoresist material layer and exposing the photoresist material layer with the mask as a shielding mask; (b) developing the exposed photoresist material layer; and (c) exposing the photoresist material layer with the patterned light-shielding layer as a shielding mask, wherein a plurality of second spacers are formed by Step (a) and Step (b), and the first spacers and a plurality of third spacers are formed by Step (a), Step (b), and Step (c), wherein vertical projections of the second spacers are located outside the first exposure openings and the translucent patterns respectively, vertical projections of the third spacers on the patterned light-shielding layer respectively overlap the translucent patterns, a height of each of the first spacers is larger than a height of each of the second spacers, and a height of each of the third spacers is between the height of each of the first spacers and the height of each of the second spacers.
 13. The fabricating method according to claim 12, wherein Step (a) precedes Step (c) or Step (c) precedes Step (a).
 14. The fabricating method according to claim 1, wherein the patterned light-shielding layer further has a plurality of translucent patterns, and the photoresist material layer is a positive photoresist and the step of performing the front exposure process, the development process, and the back exposure process on the photoresist material layer comprises: (a) providing a mask on the photoresist material layer and exposing the photoresist material layer with the mask as a shielding mask; (b) exposing the photoresist material layer with the patterned light-shielding layer as a shielding mask; and (c) developing the exposed photoresist material layer, wherein a plurality of second spacers are formed by Step (a) and Step (c), and the first spacers and a plurality of third spacers are formed by Step (a), Step (b), and Step (c), wherein vertical projections of the second spacers are located outside the first exposure openings respectively, vertical projections of the third spacers on the patterned light-shielding layer respectively overlap the translucent patterns, a height of each of the second spacers is larger than a height of each of the first spacers, and a height of each of the third spacers is between the height of each of the first spacers and the height of each of the second spacers.
 15. The fabricating method according to claim 14, wherein Step (a) precedes Step (b), and Step (c) is after Step (a) and Step (b).
 16. The fabricating method according to claim 14, wherein Step (b) precedes Step (a), and Step (c) is after Step (a) and Step (b).
 17. The fabricating method according to claim 1, wherein the patterned light-shielding layer further has a plurality of translucent patterns, and the photoresist material layer is a negative photoresist and the step of performing the front exposure process, the development process, and the back exposure process on the photoresist material layer comprises: (a) providing a mask on the photoresist material layer and exposing the photoresist material layer with the mask as a shielding mask; (b) developing the exposed photoresist material layer; and (c) exposing the photoresist material layer with the patterned light-shielding layer as a shielding mask, wherein a plurality of second spacers are formed by Step (a) and Step (b), and the first spacers and a plurality of third spacers are formed by Step (a), Step (b), and Step (c), wherein vertical projections of the second spacers are located outside the first exposure openings and the translucent patterns respectively, vertical projections of the third spacers on the patterned light-shielding layer respectively overlap the translucent patterns, a height of each of the first spacers is larger than a height of each of the second spacers, a height of each of the third spacers is between the height of each of the first spacers and the height of each of the second spacers, and the second spacers are connected with the first spacers and the third spacers.
 18. The fabricating method according to claim 17, wherein Step (a) precedes Step (c) or Step (c) precedes Step (a).
 19. The fabricating method according to claim 1, wherein the patterned light-shielding layer further has a plurality of translucent patterns, and the photoresist material layer is a positive photoresist and the step of performing the front exposure process, the development process, and the back exposure process on the photoresist material layer comprises: (a) providing a mask on the photoresist material layer and exposing the photoresist material layer with the mask as a shielding mask; (b) exposing the photoresist material layer with the patterned light-shielding layer as a shielding mask; and (c) developing the exposed photoresist material layer, wherein a plurality of second spacers are formed by Step (a) and Step (c), and the first spacers and a plurality of third spacers are formed by Step (a), Step (b), and Step (c), wherein vertical projections of the second spacers are located outside the first exposure openings respectively, vertical projections of the third spacers on the patterned light-shielding layer respectively overlap the translucent patterns, a height of each of the second spacers is larger than a height of each of the first spacers, a height of each of the third spacers is between the height of each of the first spacers and the height of each of the second spacers, and the first spacers are connected with the second spacers and the third spacers.
 20. The fabricating method according to claim 19, wherein Step (a) precedes Step (b) and Step (c) is after Step (a) and Step (b), or wherein Step (b) precedes Step (a), and Step (c) is after Step (a) and Step (b). 